Accession Number : ADA291252

Title :   Synthesis of Tungsten Nitrene Complexes as Precursors to Tungsten Nitride.

Descriptive Note : Final rept. 15 May-14 Nov 94,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF CHEMISTRY

Personal Author(s) : McElwee-White, Lisa

PDF Url : ADA291252

Report Date : 17 JAN 1995

Pagination or Media Count : 3

Abstract : Chemical vapor deposition using organometallic precursors (MOCVD) provides a method for the preparation of thin films. Low valent tungsten nitrene complexes were synthesized as potential precursors to tungsten nitride (WNx), a material used in diffusion barriers for Si or GaAs semiconductor devices. The original target precursors for MOCVD of WNx were the carbonyl-containing complexes (CO) 5-n (PR3)nW=NR, where R is an alkyl or alkyl group. Later synthetic work involved the tungsten(IV) imido (or nitrene) complexes (CO) 2I2LW equivalent NPh, which were prepared by oxidation of the zwitterionic species (CO) 5WNPhNPhC(OMe)Ph with one equivalent of I2 followed by addition of a coordinating species L (L= THF, pyridine, PMe3, P(OMe)3).

Descriptors :   *SYNTHESIS, *NITRIDES, *TUNGSTEN, PREPARATION, PRECURSORS, GALLIUM ARSENIDES, THIN FILMS, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, SEMICONDUCTOR DEVICES, TARGETS, OXIDATION, BARRIERS, DIFFUSION, ALKYL RADICALS.

Subject Categories : Inorganic Chemistry
      Metallurgy and Metallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE