Accession Number : ADA291630

Title :   Evaluation of Defect-Related Diffusion in Semiconductors by Electrooptical Sampling,

Corporate Author : COLORADO UNIV AT BOULDER DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Biernacki, Paul ; Lee, Henry ; Mickelson, Alan R.

PDF Url : ADA291630

Report Date : 15 FEB 1995

Pagination or Media Count : 48

Abstract : The electrooptical sampling technique is used to assess the electrical behavior of ohmic contact regions in GaAs. For purpose, unique ohmic contact coplanar waveguides were fabricated and tested. A reduced electrooptical sampling signal is detected in certain ohmic contact regions. Since the electrical fields present in this device are known a priori, the deviation of the electrooptical signal from its nominal value is attributed to a deviation in the electrooptical coefficient. Defects introduced during the annealing step of the ohmic contact accelerated by existing dislocations are discussed as a mechanism capable of disrupting the electrooptic coefficient. A simple phenomenological diffusion model is presented to explain the mechanism responsible for the nulling of the electrooptical coefficient. jg

Descriptors :   *ELECTROOPTICS, *GALLIUM ARSENIDES, *SEMICONDUCTORS, *DEFECTS(MATERIALS), *DIFFUSION, TEST AND EVALUATION, ANNEALING, MODELS, WAVEGUIDES, ELECTRIC FIELDS, ELECTRICAL PROPERTIES, REDUCTION, DISLOCATIONS, COEFFICIENTS, SIGNALS, PLANAR STRUCTURES, SAMPLING, ELECTRIC CONTACTS.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE