Accession Number : ADA291630
Title : Evaluation of Defect-Related Diffusion in Semiconductors by Electrooptical Sampling,
Corporate Author : COLORADO UNIV AT BOULDER DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Biernacki, Paul ; Lee, Henry ; Mickelson, Alan R.
PDF Url : ADA291630
Report Date : 15 FEB 1995
Pagination or Media Count : 48
Abstract : The electrooptical sampling technique is used to assess the electrical behavior of ohmic contact regions in GaAs. For purpose, unique ohmic contact coplanar waveguides were fabricated and tested. A reduced electrooptical sampling signal is detected in certain ohmic contact regions. Since the electrical fields present in this device are known a priori, the deviation of the electrooptical signal from its nominal value is attributed to a deviation in the electrooptical coefficient. Defects introduced during the annealing step of the ohmic contact accelerated by existing dislocations are discussed as a mechanism capable of disrupting the electrooptic coefficient. A simple phenomenological diffusion model is presented to explain the mechanism responsible for the nulling of the electrooptical coefficient. jg
Descriptors : *ELECTROOPTICS, *GALLIUM ARSENIDES, *SEMICONDUCTORS, *DEFECTS(MATERIALS), *DIFFUSION, TEST AND EVALUATION, ANNEALING, MODELS, WAVEGUIDES, ELECTRIC FIELDS, ELECTRICAL PROPERTIES, REDUCTION, DISLOCATIONS, COEFFICIENTS, SIGNALS, PLANAR STRUCTURES, SAMPLING, ELECTRIC CONTACTS.
Subject Categories : Electrical and Electronic Equipment
Laminates and Composite Materials
Distribution Statement : APPROVED FOR PUBLIC RELEASE