Accession Number : ADA291824
Title : Semiconductor Deposition and Etching Interactions of Laser-generated Translationally Hot Atoms and Radicals.
Descriptive Note : Final rept . 1 Jun 91-31 Dec 94,
Corporate Author : COLORADO UNIV AT BOULDER
Personal Author(s) : Leone, Stephen R.
PDF Url : ADA291824
Report Date : 31 DEC 1994
Pagination or Media Count : 32
Abstract : Laser vaporization of cryogenic films is employed to produce translationally fast atoms and radicals, and these kinetic-energy-enhanced species are used for studies of semiconductor etching; the results are important for the basic physics of electronics materials processing. Recent accomplishments include (1) production of a novel source of kinetic-energy-enhanced beams of Cl2, Cl, and F atoms by laser vaporization, (2) observation of substantial enhancement of the etching rate and sustained etching of room temperature Si(100) by chlorine molecules with energies > or = 3 eV, (3) scattering studies of translationally fast Cl2 and Cl with Si(100), (4) velocity selection of the translationally fast beams for energy-resolved studies of dry etching processes, and (5) measurements of SiCl(x) product distributions as a function of substrate temperature. jg
Descriptors : *INTERACTIONS, *ATOMS, *SEMICONDUCTORS, *LASERS, *ETCHING, *DEPOSITION, *VAPORIZATION, *CHEMICAL RADICALS, VELOCITY, ELECTRONICS, SCATTERING, PRODUCTION, TEMPERATURE, MOLECULES, MATERIALS, PROCESSING, COMPOSITE MATERIALS, HIGH TEMPERATURE, ENERGY, FILMS, RATES, SUBSTRATES, LASER BEAMS, PHYSICS, FLUORINE, SILICON, KINETICS, DRY MATERIALS, SELECTION, CRYOGENICS, CHLORINE.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Lasers and Masers
Laminates and Composite Materials
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE