Accession Number : ADA292485
Title : New Thin-Film Nonlinear Optical Materials: Ordered Al(1-x)In (x)P on GaAs.
Descriptive Note : Final rept. 1 Aug 93-31 Jan 94,
Corporate Author : SPIRE CORP BEDFORD MA
Personal Author(s) : Vernon,
PDF Url : ADA292485
Report Date : 31 JAN 1994
Pagination or Media Count : 21
Abstract : This program successfully demonstrated growth of ordered Al(1-x)In(x)P, lattice-matched to GaAs, by metalorganic chemical vapor deposition (MOCVD). Films were characterized by transmission electron diffraction, double-crystal X-ray rocking curve analysis, and low-temperature photoluminescence. Weak birefringence was seen by spectroscopic ellipsometry. Strong ordering in Al(1-x)In(x)P is best achieved at a growth temperature of approx. 675 deg C. jg
Descriptors : *GALLIUM ARSENIDES, *PHOTOLUMINESCENCE, *THIN FILMS, *OPTICAL MATERIALS, *NONLINEAR OPTICS, *ALUMINUM, *INDIUM PHOSPHIDES, LOW TEMPERATURE, TEMPERATURE, SPECTROSCOPY, COMPOSITE MATERIALS, GRAPHS, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, CRYSTALS, TRANSMITTANCE, BIREFRINGENCE, ELLIPSOMETERS, ELECTRON DIFFRACTION, ATOMIC PROPERTIES, LOW STRENGTH.
Subject Categories : Optics
Laminates and Composite Materials
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE