Accession Number : ADA292490
Title : ErAs/GaAs Superlattice Infrared Detector by Chemical Vapor Deposition.
Descriptive Note : Final rept. 1 Jul-31 Dec 93,
Corporate Author : SPIRE CORP BEDFORD MA
Personal Author(s) : Greenweld,
PDF Url : ADA292490
Report Date : 31 DEC 1993
Pagination or Media Count : 21
Abstract : The objective of Phase I research was to demonstrate epitaxial growth of GaAs on ErAs on a GaAs substrate using metalorganic chemical vapor deposition. Three volatile erbium sources including cyclopentadienyl, methyl-cyclopentadienyl and tris-trimethyldisilylamide and two sources of arsenic, tertiarybutyl arsine and arsine were tested for ErAs epitaxial growth 011 <100> GaAs. The optimum source chemical combination was arsine and erbium amide; all other combinations resulted in excess carbon incorporation into the erbium arsenide film. Films with excellent crystal structure were realized. Observed erbium diffusion rates at preferred gallium arsenide growth temperatures of 650 deg C exceeded diffusion rates for common dopants such as silicon. jg
Descriptors : *GALLIUM ARSENIDES, *SUPERLATTICES, *CHEMICAL VAPOR DEPOSITION, *INFRARED DETECTORS, *ERBIUM, SOURCES, CRYSTAL STRUCTURE, OPTIMIZATION, TEMPERATURE, CRYSTAL LATTICES, FILMS, ORGANOMETALLIC COMPOUNDS, EPITAXIAL GROWTH, SUBSTRATES, CARBON, SILICON, ARSENIDES, VOLATILITY, DIFFUSION, AMIDES, ARSINES, ARSENIC.
Subject Categories : Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE