Accession Number : ADA292510
Title : Drift Mobility Measurements in Thin Film Boron Carbide.
Descriptive Note : Final rept.,
Corporate Author : NEBRASKA UNIV LINCOLN BEHLEN LAB OF PHYSICS
Personal Author(s) : Dowben,
PDF Url : ADA292510
Report Date : 1995
Pagination or Media Count : 8
Abstract : Improvements in electronic device technology can occur through incremental changes and improvements in current and existing technologies or by the introduction of new techniques. This research program has developed a new technique for manufacturing nanoscale silicon compatible devices in a single step fabrication process leaping beyond existing technologies. Using chemical vapor techniques in combination with carefully designed source molecules, it has now become possible to fabricate thin materials by selective area processing - the 'direct writing' of material. Our general approach to device fabrication requires the use of novel source molecules for chemical vapor deposition (CVD). Synchrotron (X-ray) radiation has been employed to selectively deposit each active layer of a semiconductor device in a single step process. There is the potential that each step in fabricating a diode or thin film transistor can deposit material with submicron feature resolution. These processes are a form of projection lithography which requires far fewer steps than conventional lithography and can be employed to fabricate devices from novel semiconductors with abrupt, well characterized interfaces. jg p.2
Descriptors : *MOBILITY, *THIN FILMS, *SEMICONDUCTOR DEVICES, *DRIFT, *BORON CARBIDES, DIODES, SOURCES, MEASUREMENT, LAYERS, MOLECULES, MATERIALS, PROCESSING, RESOLUTION, ELECTRONIC EQUIPMENT, FABRICATION, CHEMICAL VAPOR DEPOSITION, SEMICONDUCTORS, X RAYS, DEPOSITS, LITHOGRAPHY, SILICON, TRANSISTORS, CHEMICAL ENGINEERING, SYNCHROTRONS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE