Accession Number : ADA292528
Title : Epitaxial Growth and Characterization of Si(l-x)Ge(x) Materials and Devices.
Descriptive Note : Final rept.,
Corporate Author : MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Personal Author(s) : Bhattacharya, P. ; Singh, J.
PDF Url : ADA292528
Report Date : OCT 1994
Pagination or Media Count : 24
Abstract : The current program of research was aimed at understanding the issues related to growth and doping of SiGe/Si heterostructures by gas-source MBE, studying the transport properties of the alloys, determining the fundamental material parameters and designing and demonstrating electronic and optoelectronic devices. The specific electronic device is the HBT with high Ge-containing base layers, and the optoelectronic devices are detectors, photoreceivers, and electro-optic modulators. The overall objective is to demonstrate, reliably and reproducibly, the feasibility of integrating SeGe-based optoelectronics with Si-based VLSI technology. We summarize below some of the highlights of the program related to work done in the last year. jg p.3
Descriptors : *MATERIALS, *ELECTRONIC EQUIPMENT, *EPITAXIAL GROWTH, *SILICON, *GERMANIUM, SOURCES, DETECTORS, ELECTROOPTICS, PARAMETERS, COMPOSITE MATERIALS, HETEROJUNCTIONS, VERY LARGE SCALE INTEGRATION, ALLOYS, MOLECULAR BEAMS, GASES, TRANSPORT PROPERTIES, DOPING, MODULATORS, BIPOLAR TRANSISTORS, PHOTORECEPTORS.
Subject Categories : Inorganic Chemistry
Electrooptical and Optoelectronic Devices
Properties of Metals and Alloys
Distribution Statement : APPROVED FOR PUBLIC RELEASE