Accession Number : ADA292645
Title : Radiation Effects in MOS Devices.
Descriptive Note : Technical rept.,
Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF ENGINEERING SCIENCE AND MECHA NICS
Personal Author(s) : Lenahan, P. M.
PDF Url : ADA292645
Report Date : 01 JUL 1992
Pagination or Media Count : 98
Abstract : We have utilized electron spin resonance (ESR), including a new and much more sensitive ESR technique called spin dependent recombination (SDR), to study radiation damage in metal/oxide/silicon (MOS) field effect transistors (MOSFETS). Our study has led to a considerably greater understanding of the electronic properties of radiation induced interface state defect structure and the relationship of the atomic scale geometry of these defects to their electronic properties. We have also studied the role of atomic scale stress in the creation of E' centers in SiO2. The E' center is the dominant deep hole trap in MOS oxides. In addition, we have used ESR to study the role of hydrogen in the MOS radiation damage process. jg
Descriptors : *METAL OXIDE SEMICONDUCTORS, *MOSFET SEMICONDUCTORS, *RADIATION EFFECTS, ELECTRONICS, METALS, ELECTROMAGNETIC PROPERTIES, HOLES(ELECTRON DEFICIENCIES), FIELD EFFECT TRANSISTORS, ELECTRON SPIN RESONANCE, HYDROGEN, OXIDES, SILICON, ATOMIC PROPERTIES, RADIATION DAMAGE, DEFECT ANALYSIS.
Subject Categories : Electrical and Electronic Equipment
Radiation and Nuclear Chemistry
Nuclear Radiation Shield, Protection & Safety
Distribution Statement : APPROVED FOR PUBLIC RELEASE