Accession Number : ADA292714
Title : New Material for High Average Power Infrared Generation: QPM-DB GaAs.
Descriptive Note : Final technical rept.,
Corporate Author : STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS
Personal Author(s) : Byer, Robert L. ; Feigelson, Ropbert S. ; Eckardt, Robert C. ; Route, Roger K. ; Gordon, Leslie A.
PDF Url : ADA292714
Report Date : 03 MAR 1995
Pagination or Media Count : 30
Abstract : We have demonstrated diffusion-bonded-stacked GaAs to have good potential for high average power infrared generation. Diffusion bonding is the formation of a crystalline bond between two single-crystal wafers. Quasi phasematching is achieved in a stack of wafers of alternating orientation with the goal of retaining the low loss and high damage threshold of bulk single-crystal material. In this program we have substantially reduced loss per interface from 2% to 0.5% at 2 micrometers. This is adequate for single-pass applications in harmonic, sum and difference frequency generation, but further reduction of loss is required for resonant cavity applications such as optical parametric oscillation. We have performed studies of bonding techniques, surface preparation, optical damage thresholds, and numerical modeling of nonlinear frequency conversion. We are continuing this investigation with new characterization facilities and bonding apparatus and techniques developed in this program. jg
Descriptors : *HIGH POWER, *COMPOSITE MATERIALS, *GALLIUM ARSENIDES, *DIFFUSION BONDING, *INFRARED RADIATION, *FREQUENCY CONVERSION, MATHEMATICAL MODELS, OPTICAL EQUIPMENT, DAMAGE, THRESHOLD EFFECTS, SINGLE CRYSTALS, CAVITIES, LASERS, BULK MATERIALS, SURFACES, LOW LOSS, NONLINEAR SYSTEMS, RESONANCE, ELECTRIC POWER PRODUCTION, WAFERS, OSCILLATION, DIFFERENCE FREQUENCY.
Subject Categories : Inorganic Chemistry
Laminates and Composite Materials
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE