Accession Number : ADA292906
Title : Pseudomorphic Heterostructure Materials for High Performance Devices.
Descriptive Note : Final technical rept. 15 Dec 92-14 Dec 94,
Corporate Author : COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Wang, Wen I.
PDF Url : ADA292906
Report Date : 21 MAR 1995
Pagination or Media Count : 12
Abstract : Using the planar-doping technique, Si has been shown to be amphoteric on (311)A InAlAs/InGaAs/InP grown by molecular beam epitaxy and excellent modulation-doped field effect transistors have been demonstrated. Through the use of an AlN/GaN strained superlattice buffer layer, high quality GaN layers were obtained. Crystalline SiC thin layers have been grown on 125 mm silicon-on-insulator (SOI) substrates. These two techniques have also been combined to synthesize the first GaN on SiC on SOI structure. Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. jg
Descriptors : *COMPOSITE MATERIALS, *SILICON CARBIDES, BUFFERS, OPTIMIZATION, LAYERS, MATERIALS, CRYSTAL LATTICES, QUANTUM WELLS, GALLIUM ARSENIDES, SUPERLATTICES, EPITAXIAL GROWTH, SUBSTRATES, MOLECULAR BEAMS, NITRIDES, ALUMINUM, INFRARED DETECTORS, HETEROGENEITY, PHOSPHIDES, VALENCE, THINNESS, DOPING, ABSORPTION, PHOTODETECTORS, INDIUM, ANTIMONIDES.
Subject Categories : Laminates and Composite Materials
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE