Accession Number : ADA293199

Title :   Development of Germanium-Silicon Growth Technology.

Descriptive Note : Final rept. 1 Feb 92-31 Jan 95,

Corporate Author : CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G

Personal Author(s) : Greve, D. W.

PDF Url : ADA293199

Report Date : 15 MAR 1995

Pagination or Media Count : 24

Abstract : Germanium-silicon epitaxial heterostructures have been grown and evaluated for possible use in far-infrared detectors. Growth was performed by ultra-high vacuum chemical vapor deposition at temperatures of 550-600 deg C. Multiple quantum well structures were grown and evaluated by X-ray diffraction, secondary ion mass spectrometry, and photoluminescence. Infrared absorption measurements showed that free-carrier absorption was dominant for normal-incidence illumination. Heterojunction internal photoemission structures have also been grown and characterized. The results show that both structures can be successfully fabricated using this technique when growth parameters are correctly chosen. jg

Descriptors :   *EPITAXIAL GROWTH, *SILICON, *GERMANIUM, TEST AND EVALUATION, IONS, MEASUREMENT, SECONDARY, PHOTOLUMINESCENCE, HETEROJUNCTIONS, STRUCTURES, X RAY DIFFRACTION, FABRICATION, CHEMICAL VAPOR DEPOSITION, FAR INFRARED RADIATION, PHOTOELECTRIC EMISSION, INTERNAL, INFRARED DETECTORS, QUANTUM ELECTRONICS, ABSORPTION, ULTRAHIGH VACUUM, MASS SPECTROMETRY.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Crystallography
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE