Accession Number : ADA293206

Title :   Opto-Electronic Components from Non-Stoichiometric III-V Materials.

Descriptive Note : Final rept. 15 Jun-15 Dec 94,

Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT

Personal Author(s) : Grubin, H. L. ; Kreskovsky, J. P.

PDF Url : ADA293206

Report Date : 28 FEB 1995

Pagination or Media Count : 31

Abstract : An investigation was undertaken to determine the feasibility of integrating low temperature growth GaAs:As and silicon for the development of optoelectronic devices. These devices attempt to exploit the optoelectronic properties of LT GaAs while integrating the structure on silicon substrates. Numerical models of LT GaAs are developed and implemented to aid in the design of such devices. An integrated MSM-LED structure was successfully fabricated on a silicon substrate. The results of the study show that it is feasible to integrate LT GaAs devices and silicon technology. Further development of the design software and a variety of structures, including a high voltage switch, a transceiver and a GHz tunable filter are proposed for a Phase II effort. jg

Descriptors :   *COMPOSITE MATERIALS, *GALLIUM ARSENIDES, *GROUP III COMPOUNDS, COMPUTER PROGRAMS, MATHEMATICAL MODELS, METALS, LOW TEMPERATURE, ELECTROOPTICS, FABRICATION, INTEGRATED CIRCUITS, SUBSTRATES, SEMICONDUCTORS, SILICON, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, FILTERS, TRANSMITTER RECEIVERS, STOICHIOMETRY, SWITCHES, LIGHT EMITTING DIODES, HIGH VOLTAGE.

Subject Categories : Electrooptical and Optoelectronic Devices
      Inorganic Chemistry
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE