Accession Number : ADA293255

Title :   InP Solar Cell Development on Inexpensive Si Substrates.

Descriptive Note : Rept. for 22 Feb 94-22 Feb 95.

Corporate Author : SPIRE CORP BEDFORD MA

PDF Url : ADA293255

Report Date : 22 FEB 1995

Pagination or Media Count : 3

Abstract : Optimized emitter/base dopants-At this point in the program, emitter designs have been roughly optimized for both P/N and N/P cells. For P/N cells, the emitter formation and cell junction depth are determined by zinc diffusion from the InGaAs contact cap. Zinc is a P-type dopant in InP. When we attempted to define epitaxially grown emitters, these emitters, which had thickness on the order of 1000A, were dominated by zinc diffusing out of the InGaAs contact cap, which effectively set the emitter depth at about 3000A. It therefore made little difference whether the epitaxially grown emitter layer was 100 or 1000A, since the junction depth was fixed by the zinc diffusing out of the InGaAs to 3000A. Spire was able to improve the P/N cell performance by controlling the thickness of the InGaAs cap layer, the solid state diffusion source for the zinc, as well as the growth temperature. Best cell performance was with a 1000A InGaAs cap thickness with the entire cell grown at 650 deg C. jg p.1

Descriptors :   *GALLIUM ARSENIDES, *SOLAR CELLS, *SILICON, *INDIUM PHOSPHIDES, *EMITTERS, SOURCES, TEMPERATURE, THICKNESS, LAYERS, EPITAXIAL GROWTH, ZINC, DIFFUSION, DOPING, JUNCTIONS, SOLID STATE PHYSICS.

Subject Categories : Electric Power Production and Distribution
      Inorganic Chemistry
      Laminates and Composite Materials
      Crystallography
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE