Accession Number : ADA293281
Title : InP Solar Cell Development on Inexpensive Si Substrates.
Descriptive Note : Rept. for 22 Feb 94-22 Feb 95.
Corporate Author : SPIRE CORP BEDFORD MA
PDF Url : ADA293281
Report Date : 22 FEB 1995
Pagination or Media Count : 5
Abstract : Purpose: Examine whether InP cell efficiency can be improved by use of a high bandgap pseudomorphic window to reduce surface recombination. PN and NP InP cells on InP wafers were made with 500A InGaP (1.9 eV) and InAlAs (1.5 eV) windows, as well as no windows (controls). Improvements in the baseline InP cell technology would improve the overall InP/Si cell efficiency. jg p.1
Descriptors : *SOLAR CELLS, *SILICON, *INDIUM PHOSPHIDES, BUFFERS, EFFICIENCY, SURFACES, GALLIUM, ALUMINUM ARSENIDES, WAFERS.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE