Accession Number : ADA293587
Title : Si-Device-Related Interface Research.
Descriptive Note : Final rept.,
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE
Personal Author(s) : Weaver, John H.
PDF Url : ADA293587
Report Date : 31 DEC 1994
Pagination or Media Count : 7
Abstract : This program aimed at understanding some of the key materials issues relevant to electronic-device miniaturization. In particular, it focused on understanding atomic scale processes that occur during oxidation and etching of Si surfaces. In our studies, we used scanning tunneling microscopy to obtain sub-nanometer resolution of the surface structure and photoelectron spectroscopy to obtain chemical information. The initial stages of the project focused on the oxidation of Si(100) with H2O. Subsequent investigations emphasized the interactions of Si(100) with halogen molecules, with parallel investigations of halogen etching of GaAs(1 10). jg p. 5
Descriptors : *INTERFACES, *ELECTRON MICROSCOPY, *SILICON, SCANNING, CHEMICALS, MOLECULES, WATER, MATERIALS, COMPOSITE MATERIALS, GALLIUM ARSENIDES, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, ETCHING, SURFACES, OXIDATION, SCALE, PARALLEL ORIENTATION, ATOMIC PROPERTIES, CHEMICAL COMPOUNDS, HALOGENS, PHOTOELECTRON SPECTRA.
Subject Categories : Inorganic Chemistry
Laminates and Composite Materials
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE