Accession Number : ADA294456
Title : The Role of Nickel in Si(001) Roughening.
Descriptive Note : Technical rept.
Corporate Author : PITTSBURGH UNIV PA SURFACE SCIENCE CENTER
Personal Author(s) : Ukraintsev, V. A. ; Yates, John T., Jr
PDF Url : ADA294456
Report Date : 10 MAY 1995
Pagination or Media Count : 31
Abstract : The role of Ni impurities on the structure of the Si(001)-(2x1) surface has been investigated by statistically comparing STM patterns with Auger spectra. Characteristic reconstructed local structures (split off dimers' and vacancy channels') are observed for different surface concentrations of Ni as measured by Auger electron spectroscopy, and it is shown that the STM image provides a high sensitivity to Ni. For high levels of Ni contamination, long range roughening of the Si(001) surface is observed resulting in more than 30 A corrugation and loss of atomic structure as detected by the STM. Crystal support cleaning procedures and crystal annealing procedures have been devised permitting Si(001) crystals to be repeatedly heated over long time periods without undergoing surface contamination or macroscopic roughening. jg
Descriptors : *SURFACE ROUGHNESS, *IMPURITIES, *SILICON, *NICKEL, *AUGER ELECTRON SPECTROSCOPY, SCANNING, ANNEALING, TUNNELING(ELECTRONICS), STRUCTURES, CRYSTALS, MICROSCOPY, LOW ENERGY, VACANCIES(CRYSTAL DEFECTS), CLEANING, CONTAMINATION, ELECTRON DIFFRACTION, DIMERS, ATOMIC STRUCTURE, HIGH SENSITIVITY.
Subject Categories : Inorganic Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE