Accession Number : ADA294519

Title :   Development of Thin Film Diamond Based Integrated Circuit Technology.

Descriptive Note : Final rept. 1 Jan 92-31 Dec 94,

Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK

Personal Author(s) : Badzian, Andrzej ; Gildenblat, Gennady

PDF Url : ADA294519

Report Date : 31 DEC 1994

Pagination or Media Count : 12

Abstract : In the portion of this project funded by BMDO/IST, we have been developing the elements of a diamond based semiconductor technology for high temperature applications. The approach is centered around incorporating a Schottky barrier contact and MOS field effect transistor using diamond films prepared by microwave plasma chemical vapor deposition (MPACVD). The experimental basis for this research is the successful fabrication in our laboratory of the world's first Schottky diodes with PACVD diamond base. These devices have characteristics similar to their counterparts fabricated using single crystal synthetic diamond prepared by high pressure methods. This has required a detailed understanding and control of the deposition process at it relates to the chemical purity and structural perfection of the resulting single crystal diamond films, in addition, detailed characterization of the films has allowed for meaningful preparation characterization electronic property relations. The ultimate goal of the proposed research is to fabricate transistors on single crystal heteroepitaxial diamond and to fabricate small scale integrated circuit operational at 400-500 deg C.

Descriptors :   *INTEGRATED CIRCUITS, *SUBSTRATES, *FIELD EFFECT TRANSISTORS, *MONOLITHIC STRUCTURES(ELECTRONICS), HIGH TEMPERATURE, THIN FILMS, DIAMONDS, SINGLE CRYSTALS, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, HIGH PRESSURE, SEMICONDUCTOR DIODES, PURITY, SCHOTTKY BARRIER DEVICES, SYNTHETIC STONES.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE