Accession Number : ADA294524

Title :   A Comparison of Silicon UMOSFETs Versus GaAs Vertical FETs For Low Voltage, Synchronous Rectification at 2.5 MHz.

Corporate Author : TEXAS INSTRUMENTS INC DALLAS DEFENSE SYSTEMS AND ELECTRONICS GROUP

Personal Author(s) : Kollman, Robert ; Sills, Guy ; Yuan, James ; Syau, Tsengyou ; Venkatraman, Prasad

PDF Url : ADA294524

Report Date : MAY 1992

Pagination or Media Count : 12

Abstract : A comparison between the rectification efficiency of silicon UMOSFETs versus GaAs vertical FETs in a 1.5 volt, 2.5 megahertz power supply application is presented. A new figure of merit describing conduction and switching losses of synchronous rectifiers in a resonant circuit is developed to compare losses. A method to minimize losses by optimizing die area is discussed. A summary of present silicon and GaAs vertical channel FET technology is presented. Theoretical and experimental results are reported for the best silicon UMOSFET and GaAs VFET designs. It is shown that the GaAs VFET is substantially more efficient with approximately 1/3 the loss of the silicon approach.

Descriptors :   *FIELD EFFECT TRANSISTORS, *RECTIFIERS, COMPARISON, EFFICIENCY, DIES, SILICON, RESONANCE, POWER SUPPLIES, MODULES(ELECTRONICS), LOSSES, FIGURE OF MERIT, LOW VOLTAGE, ELECTRONIC SWITCHING.

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE