Accession Number : ADA294659

Title :   Plasma Processing of Materials In Microelectronics and Photonics. Phase 1, Technical Program.

Descriptive Note : Final scientific and technical rept. Jul 94-Feb 95,

Corporate Author : APPLIED SCIENCE AND TECHNOLOGY INC WOBURN MA

Personal Author(s) : Lane, Barton ; Holber, William

PDF Url : ADA294659

Report Date : 17 MAY 1995

Pagination or Media Count : 38

Abstract : The goal of the project is to develop a process for the patterning of SiNx films over GaAs which maintains sub-micron line shape while minimizing damage to the GaAs crystal substrate. The development activities are being pursued using an ECR source to provide a high density plasma and an RF powered substrate holder to provide the ion energy and directionality. The chemistry chosen is CF4/02 buffered with Argon.The goals of the program are to develop an understanding of the key physical processes which determine etch line shape, damage to the GaAs crystal substrate and etch radial uniformity through an integrated experimental and modelling program. Based on this understanding a new process and reactor hardware set and diagnostics will be developed; the development and construction of this new process hardware diagnostic set would be undertaken in Phase II.

Descriptors :   *MANUFACTURING, *PLASMAS(PHYSICS), *PRODUCTION ENGINEERING, *PHOTONICS, *MICROELECTRONICS, IONS, INTEGRATED SYSTEMS, PROCESSING, GALLIUM ARSENIDES, SHAPE, FILMS, ELECTROCHEMISTRY, SUBSTRATES, CRYSTALS, ETCHING, HIGH DENSITY, SILICON NITRIDES, LINE SPECTRA.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Plasma Physics and Magnetohydrodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE