Accession Number : ADA294686

Title :   Transport Limitations in Selective Diamond Deposition.

Descriptive Note : Annual progress rept. no. 1, 1 Jul 94-30 Jun 95,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMICAL ENGINEERING

Personal Author(s) : Gleason, Karen K.

PDF Url : ADA294686

Report Date : 30 JUN 1995

Pagination or Media Count : 12

Abstract : A high-selectivity diamond deposition process has been developed for feature sizes ranging from 0.6 micrometer to 2 cm. Variations in diamond growth rate as a result of this patterning have been observed and modeled by a finite difference method. This work provides a critical test of the interplay between surface kinetics and mass transport effects on the chemical vapor deposition process. The control of crystallite spacing may prove useful in fabrication of devices for cold-cathode emission and in growing contiguous polycrystalline films with well-defined grain structure. jg

Descriptors :   *DIAMONDS, *DEPOSITION, *TRANSPORT, TEST AND EVALUATION, EMISSION, GROWTH(GENERAL), FILMS, FABRICATION, CHEMICAL VAPOR DEPOSITION, SURFACES, FINITE DIFFERENCE THEORY, LIMITATIONS, MASS TRANSFER, KINETICS, GRAIN STRUCTURES(METALLURGY), COLD CATHODE TUBES, POLYCRYSTALLINE.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Coatings, Colorants and Finishes
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE