Accession Number : ADA294709
Title : 5-Picosecond Photoconductive Sampling Oscilloscope.
Descriptive Note : Final rept,
Corporate Author : PICOTRONIX INC ANN ARBOR MI
Personal Author(s) : Williamson, Steven
PDF Url : ADA294709
Report Date : 14 APR 1995
Pagination or Media Count : 33
Abstract : During our Phase I SBIR we developed a novel laser-driven picosecond sampling photogate that has 5-picosecond temporal resolution and 10-microvolt sensitivity. The sampling gate system is evaluated and applied to several testing environments. To improve the sensitivity further, and lower the required excitation light level, we use a high-impedance transimpedance preamplifier stage. This amplifier permits us to measure signals down to 1 microvolt using less than 10 microwatts of average optical power. The sampling gate technology has now been extended to picosecond time domain reflectometry measurements. Furthermore, we have coupled the picosecond sampling gate to a Picoprobe test probe to measure signals from circuits on wafer. This sampling gate system has now been applied by us to test all our high speed photodetectors. Finally, we have engineered low temperature MBE grown In0.25Gao.75As (LT- In0.256Ga0.75As ) that shows a temporal resolution of 4.2 picoseconds.
Descriptors : *GATES(CIRCUITS), *PHOTODETECTORS, *SAMPLERS, MEASUREMENT, OPTICAL PROPERTIES, PROBES, LOW TEMPERATURE, EXCITATION, GALLIUM ARSENIDES, SAMPLING, ARSENIDES, WAFERS, REFLECTOMETERS, INDIUM, TIME DOMAIN.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE