Accession Number : ADA294728
Title : Complementary 2-D MESFET for Low Power Electronics.
Descriptive Note : Interim rept. no. 2.
Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA
PDF Url : ADA294728
Report Date : 03 JUN 1995
Pagination or Media Count : 3
Abstract : As detailed in the Phase I proposal, the project has four major tasks. These are (1) assessment of the p-channel 2-D MESFET device fabrication, (2) development of a p-channel 2-D MESFET model and implementation of the model into AIM-SPICE, (3) circuit simulations of complementary 2-D MESFET circuits using AIM-SPICE and comparison with conventional circuits, and, (4) analysis of manufacturability and technology insertion issues. This report summarizes progress in each task area during the period 17 MAY 95-3 JUN 95.
Descriptors : *LOW POWER, *FIELD EFFECT TRANSISTORS, SIMULATION, TWO DIMENSIONAL, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, ELECTRONIC EQUIPMENT, SEMICONDUCTOR DEVICES, POWER EQUIPMENT, CIRCUITS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE