Accession Number : ADA294787

Title :   Development of a Digital X-Ray Topographic Mapping Technique for Automated, Rapid Characterization of Production GaAs Wafers.

Descriptive Note : Final rept.,

Corporate Author : BRIMROSE CORP OF AMERICA BALTIMORE MD

Personal Author(s) : Rosemeier, Ronald G. ; Ananthanarayanan, T. S. ; Trivedi, S. B. ; Wiltrout, Alfred L. ; Leepa, Douglas C.

PDF Url : ADA294787

Report Date : 30 MAR 1988

Pagination or Media Count : 71

Abstract : This research program was to develop a digital and automated x-ray topographic technique for use a rapid quality control tool in characterizing 3' GaAs wafers. The conclusions show that the DARC topography system is a tool capable of providing users with the information needed to characterize production III-V and II-VI semiconductor wafers. jg

Descriptors :   *GALLIUM ARSENIDES, *SEMICONDUCTORS, *X RAYS, *WAFERS, *TOPOGRAPHIC MAPS, *DIGITAL MAPS, AUTOMATION, PRODUCTION, TOOLS, QUALITY CONTROL, GROUP III COMPOUNDS, GROUP V COMPOUNDS, GROUP II-VI COMPOUNDS.

Subject Categories : Cartography and Aerial Photography
      Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Computer Systems

Distribution Statement : APPROVED FOR PUBLIC RELEASE