Accession Number : ADA294964

Title :   WOCSDICE '95 Workshop On Compound Semiconductor Devices And Intergrated Circuits (19th) Held in Stockholm, Sweden on May 21 - 24, 1995.

Corporate Author : ERICSSON COMPONENTS AB STOCKHOLM (SWEDEN) COMMUNICATIONS DEPT

PDF Url : ADA294964

Report Date : 24 MAY 1995

Pagination or Media Count : 140

Abstract : Partial contents: Properties and Applications of GaN Films; Carbon Doping of InGaAs for InP-Based HBTs using Liquid CCl4 Source; GaAs MOVPE Overgrowth of nm-sized Tungsten Wires; MOCVD for HBT and HEMT Technology; Semiconductor Technologies; Limitation in concentration and mobility for Si delta-doping and Si monolayers in GaAs; Modification of InGaAs/InAlAs Hetero-Barriers by Delta Doping; New Electronic Materials: Low Temperature Grown GaAs and InP. jg p. 2

Descriptors :   *INTEGRATED CIRCUITS, *SEMICONDUCTOR DEVICES, LOW TEMPERATURE, SYMPOSIA, COMPOSITE MATERIALS, WIRE, GALLIUM ARSENIDES, FILMS, ELECTRONIC EQUIPMENT, EPITAXIAL GROWTH, CARBON, NITRIDES, SILICON, ALUMINUM ARSENIDES, DOPING, INDIUM PHOSPHIDES, TUNGSTEN, SWEDEN, CARBON TETRACHLORIDE.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE