Accession Number : ADA294976

Title :   Growth of GaN Single-Crystal Boules.

Descriptive Note : Final rept.,

Corporate Author : ASTRALUX BOULDER CO

Personal Author(s) : Leksono, Moeljanto ; Pankova, Jaques I.

PDF Url : ADA294976

Report Date : 20 MAR 1995

Pagination or Media Count : 8

Abstract : The first step in growing a GaN boule was to demonstrate the possibility of growing GaN from elemental Ga and ammonia on a substrate. Although GaN crystals were obtained the diffusion rate of gas vapor was too high. A number of other problems was uncovered and their solution was conceived. Several changes to the deposition system were made, but to succeed, a more radical redesign is needed. This new design will be proposed as a first task during Phase II. The Phase I work has been a very useful experience that uncovered valuable insights. jg

Descriptors :   *SINGLE CRYSTALS, *NITRIDES, *AMMONIA, *GALLIUM, VAPORS, GROWTH(GENERAL), RATES, SUBSTRATES, GASES, DEPOSITION, DIFFUSION, WAFERS, CARRIER MOBILITY, DEFECT ANALYSIS.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE