Accession Number : ADA294999

Title :   Use of D2 to Elucidate OMVPE Growth Mechanisms.

Descriptive Note : Final rept. 1 Dec 90-1 May 94,

Corporate Author : UTAH UNIV SALT LAKE CITY

Personal Author(s) : Stringfellow, Gerald B.

PDF Url : ADA294999

Report Date : 01 MAY 1994

Pagination or Media Count : 10

Abstract : The research concentrated on two important areas of organometallic vapor phase epitaxial growth: (1) A study of the pyrolysis reactions and rates for five new antimony precursors: trivinylantimony (TVSb), triisopropylantimony (TIPSb), triallylantimony (TASb), tertiary- butyldimethyl-antimony (TBDMSb), and diisopropylantimonyhydride (DIPSbH). They have been compared with the standard precursor, trimethylantimony (TMSb). The pyrolysis temperatures for TIPSb, TASb, TBDMSb, and DIPSbH are all much lower than for TVSb, which is similar to TMSb. The pyrolysis mechanisms are surprisingly dissimilar. (2) The effect of adding tertiarybutyl radicals (from azo-t-butane pyrolysis) on the low temperature growth of GaAs using trimethylgallium (TMGa) and arsine. The pyrolysis of both precursors is stimulated by t-butyl radicals. The growth rate at 450 deg C is found to be enhanced by a factor of 6, giving good morphology layers. The properties of the layers were studied using X-ray diffraction, photoluminescence, and Raman spectroscopy. jg

Descriptors :   *ORGANOMETALLIC COMPOUNDS, *EPITAXIAL GROWTH, *VAPOR PHASES, *ANTIMONY COMPOUNDS, TEMPERATURE, LOW TEMPERATURE, HYDRIDES, METHYL RADICALS, LAYERS, PRECURSORS, GALLIUM ARSENIDES, PHOTOLUMINESCENCE, RAMAN SPECTROSCOPY, MORPHOLOGY, X RAY DIFFRACTION, RATES, DEUTERIUM, ARSINES, PYROLYSIS, ALKYL RADICALS.

Subject Categories : Organic Chemistry
      Inorganic Chemistry
      Physical Chemistry
      Atomic and Molecular Physics and Spectroscopy
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE