Accession Number : ADA295007

Title :   SiGeC Alloys for Optoelectronic Devices.

Descriptive Note : Annual rept. no. 3 (Final) 1 Sep 93-31 Aug 94,

Corporate Author : DELAWARE UNIV NEWARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Kolodzey, James

PDF Url : ADA295007

Report Date : AUG 1995

Pagination or Media Count : 12

Abstract : Si(1-x-yGe(x)C(y) alloys have been actively investigated for use in heterojunction devices compatible with Si. Using the following values for the lattice constants of Si, Ge and C: (a)Si=0.54309 nm, (a)Ge=0.56576 nm and (a)C=0.35667 nm, and assuming Vegard's Law we obtain the condition on the ratio of Ge and C atomic fractions for lattice-matching to Si: x/y = 8.2. For Ge(1-y)C(y), binary alloys, the composition Ge(0.89)C(0.11) is predicted to be lattice-matched to silicon. jg p.2

Descriptors :   *HETEROJUNCTIONS, *CARBON, *SILICON, *GERMANIUM, *BINARY ALLOYS, RATIOS, ELECTROOPTICS, LATTICE DYNAMICS.

Subject Categories : Properties of Metals and Alloys
      Inorganic Chemistry
      Physical Chemistry
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE