
Accession Number : ADA295007
Title : SiGeC Alloys for Optoelectronic Devices.
Descriptive Note : Annual rept. no. 3 (Final) 1 Sep 9331 Aug 94,
Corporate Author : DELAWARE UNIV NEWARK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Kolodzey, James
PDF Url : ADA295007
Report Date : AUG 1995
Pagination or Media Count : 12
Abstract : Si(1xyGe(x)C(y) alloys have been actively investigated for use in heterojunction devices compatible with Si. Using the following values for the lattice constants of Si, Ge and C: (a)Si=0.54309 nm, (a)Ge=0.56576 nm and (a)C=0.35667 nm, and assuming Vegard's Law we obtain the condition on the ratio of Ge and C atomic fractions for latticematching to Si: x/y = 8.2. For Ge(1y)C(y), binary alloys, the composition Ge(0.89)C(0.11) is predicted to be latticematched to silicon. jg p.2
Descriptors : *HETEROJUNCTIONS, *CARBON, *SILICON, *GERMANIUM, *BINARY ALLOYS, RATIOS, ELECTROOPTICS, LATTICE DYNAMICS.
Subject Categories : Properties of Metals and Alloys
Inorganic Chemistry
Physical Chemistry
Optics
Distribution Statement : APPROVED FOR PUBLIC RELEASE