Accession Number : ADA295015
Title : Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and their Influence on Device Operation.
Descriptive Note : Final rept. 1 Oct 93-1 Apr 94,
Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Personal Author(s) : Grubin, Harold L. ; Kreskovsky, John P.
PDF Url : ADA295015
Report Date : 17 JUN 1994
Pagination or Media Count : 36
Abstract : Through the use of numerical methods involving both the drift and diffusion equations including traps, and more recently the quantum Liouville equation, Scientific Research Associates, Inc., (SRA) has been examining the physics and operation of LTG materials and devices. Both defect and Schottky models have been studied, and two-dimensional microscopic and macroscopic device simulations have been performed. A new generalization of the drift and diffusion equations, including current, has been implemented for the specific purpose of treating embedded metallic precipitates. This document summarizes SRA work under U.S. Air Force, Office of Scientific Research, Contract # F49620-9 1 -C-0023. jg
Descriptors : *BUFFERS, *LOW TEMPERATURE, *GALLIUM ARSENIDES, *NUMERICAL ANALYSIS, SIMULATION, METALS, AIR FORCE, MODELS, LAYERS, COMPOSITE MATERIALS, QUANTUM THEORY, POINT DEFECTS, MICROSCOPY, DRIFT, PHYSICS, OPERATION, EMBEDDING, DIFFUSION, NUMERICAL METHODS AND PROCEDURES, SCHOTTKY BARRIER DEVICES, CRYSTAL GROWTH, TRAPS, CURRENT, DEFECT ANALYSIS, PRECIPITATES, LIOUVILLE EQUATION.
Subject Categories : Inorganic Chemistry
Properties of Metals and Alloys
Distribution Statement : APPROVED FOR PUBLIC RELEASE