Accession Number : ADA295016
Title : Heteroepitaxial Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy.
Descriptive Note : Final technical rept. 1 Jul 91-30 jun 94,
Corporate Author : COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Wang, Wen I.
PDF Url : ADA295016
Report Date : 31 AUG 1994
Pagination or Media Count : 14
Abstract : Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. The orientation dependence of infrared absorption in AlAs/A1GaAs x-valley multiple quantum wells grown on GaAs and Si has been studied. InSb films with excellent x-ray rocking curve linewidths have been grown on GaAs and Si by molecular beam epitaxy for infrared detector applications. AlSbAs/InAs heterostructure field-effect transistors with high breakdown voltage has been achieved. jg
Descriptors : *COMPOSITE MATERIALS, *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *ARSENIDES, *GROUP III COMPOUNDS, *GROUP IV COMPOUNDS, *GROUP V COMPOUNDS, *ANTIMONIDES, MATERIALS, QUANTUM WELLS, GALLIUM ARSENIDES, ORIENTATION(DIRECTION), VOLTAGE, FIELD EFFECT TRANSISTORS, INFRARED DETECTORS, HETEROGENEITY, VALENCE, ALUMINUM ARSENIDES, ABSORPTION, INFRARED RADIATION, PHOTODETECTORS, INDIUM, BREAKDOWN(ELECTRONIC THRESHOLD), TRANSISTORS, HIGH VOLTAGE.
Subject Categories : Laminates and Composite Materials
Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE