Accession Number : ADA295033

Title :   Growth and Structure of MBE-Deposited Iridium Silicide.

Descriptive Note : Final technical rept. 1 Apr 91-31 Mar 94,

Corporate Author : ARIZONA UNIV TUCSON

Personal Author(s) : Falco, Charles M.

PDF Url : ADA295033

Report Date : 10 JAN 1995

Pagination or Media Count : 14

Abstract : This report describes accomplishments made during the previous three years on a research program to prepare iridium silicide films by Molecular Beam Epitaxy-MBE, and characterize their physical and chemical structure in detail as a function of preparation conditions using the wide variety of probes available in our laboratory. By use of our MBE growth techniques we were able to form pure IrSi3 films at temperatures as low as 450 deg C, which is almost 200 deg C lower than previously reported. We also found a previously-unreported c-axis epitaxial lrSi3 growth mode at approx. 700 deg C, found that the lrSi3 epitaxy on Si(111) was dominated by a Mode B* orientation which had not previously been reported in the literature, as well as showed that the epitaxial growth of IrSi3 on Si(111) was superior to that on Si(100). Measurements made at Rome Laboratory found that the Schottky barrier height of the IrS3 film on Si(111) was considerably larger than that on Si(100) substrates. We also studied in detail the growth and structure of five different types of iridium silicide films: co-deposited and reacted IrSi, co-deposited Ir3Si4, reacted IrSi3, co-deposited lrSi3, and pure Ir reacted on hot Si substrates. This allowed us to form a previously-unreported silicide, Ir3Si4, and identify six epitaxial growth modes of Ir3Si4 crystallites with the Si(100) surface. jg


Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Atomic and Molecular Physics and Spectroscopy
      Nuclear Physics & Elementary Particle Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE