Accession Number : ADA295134

Title :   Thin Film Routes to New Materials.

Descriptive Note : Final technical rept. 1 Nov 93-31 Oct 94,

Corporate Author : OREGON STATE UNIV CORVALLIS DEPT OF CHEMISTRY

Personal Author(s) : Sleight, Arthur W.

PDF Url : ADA295134

Report Date : 31 OCT 1994

Pagination or Media Count : 24

Abstract : Thin films of Sr sub (1-x)CuO2-8 with the infinite-layer structure were prepared using the single target rf-magnetron sputtering method. The substrate was MgO or SrTiO3 in an off-axis configuration. Previous reports have focused on films prepared on MgO substrates. This report focuses on films prepared on SrTiO3 substrates. The structure and the electrical properties of the films were found to be sensitive to the oxygen pressure during sputtering. Quantitative analysis of X-ray diffraction data indicated that films formed under lower oxygen pressure possessed a larger concentration of defects and higher electrical resistivities. The highest conductivity was observed in a film which contained two infinite-layer phases, one with a relatively low concentration of defects and another with a higher concentration of defects. A discussion is given of the necessary corrections that must be made in order to quantitatively evaluate epitaxial thin film X-ray diffraction intensities measured with a theta - 2 theta diffractometer. (MM)

Descriptors :   *THIN FILMS, HIGH TEMPERATURE, SUPERCONDUCTORS, X RAY DIFFRACTION, SINGLE CRYSTALS, EPITAXIAL GROWTH, SUBSTRATES, ELECTRICAL CONDUCTIVITY, DEFECTS(MATERIALS), COPPER, ELECTRICAL RESISTANCE, SPUTTERING, BARIUM, CRYSTAL GROWTH, STRONTIUM COMPOUNDS, MAGNESIUM OXIDES, MAGNETRONS.

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE