Accession Number : ADA295420
Title : Development of Process Technology for the Fabrication of Mesoscopic Devices.
Descriptive Note : Final technical rept. 1 Jul 92-31 May 95,
Corporate Author : OREGON GRADUATE INST BEAVERTON
Personal Author(s) : Sigmon, Thomas W. ; Alexander, Jane A. ; Witt, Gerald
PDF Url : ADA295420
Report Date : 30 MAY 1995
Pagination or Media Count : 100
Abstract : The development of the processes necessary for fabrication of sub-100nm heteroepitaxial Si(x)G3e(1 -x) structures in Si (100) substrates is described. The structures are required to be planar and definable by available patterning techniques (e.g. X-ray, e-beam, ion beam, or optical lithography). The report describes the investigation of two candidate patterning processes, enhanced ion beam etching, and standard e-beam lift off. The formation of the heteroepitaxial structures, in the form of nano-wires, is carried out using pulsed laser induced epitaxy, an ultra-rapid (<100ns) epitaxial growth technique driven by a pulsed excimer laser. Development of a novel, high yield cross sectioning process to examine the wire structures was also carried out during the course of this effort. This process used ion beam deposition of a platinum etch mask, followed by an enhanced, localized ion beam etch to define the wire specimen. Results from cross sectional transmission electron beam analysis indicate successful formation of the heteroepitaxial wires with no defects being observed. jg
Descriptors : *EPITAXIAL GROWTH, *SILICON, *GERMANIUM, OPTICAL PROPERTIES, WIRE, STRUCTURES, INTEGRATED CIRCUITS, SUBSTRATES, STRAIN(MECHANICS), ION BEAMS, PULSED LASERS, ETCHING, DEPOSITION, LITHOGRAPHY, ELECTRON BEAMS, CHLORIDES, PATTERNS, QUANTUM ELECTRONICS, PLATINUM, RELAXATION, LIFT, EXCIMERS, XENON, MASKS, BIPOLAR TRANSISTORS, DEFECT ANALYSIS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Laminates and Composite Materials
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE