Accession Number : ADA295460
Title : Novel Hybrid Superconductors/Semiconductor Heterostructures Devices.
Descriptive Note : Final rept. 1 Dec 91-30 Nov 94,
Corporate Author : STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS
Personal Author(s) : Kastalsky, A. ; Gurvitch, M.
PDF Url : ADA295460
Report Date : 30 NOV 1994
Pagination or Media Count : 19
Abstract : The initial proposal argued a case for a research on a combination of superconducting electrodes (films) with sophisticated III-V epitaxial semiconductor structures exhibiting quantum 2-D electron effects. The materials envisioned at that time included In(Ga)As/AlSb epitaxial multilayered structures and Nb films. The dual purpose was to study physics at Superconductor - Semiconductor (Su-Sm) interfaces and to try and create devices of the superconducting FET type with low power dissipation and high transconductance (rate of change of the channel current with the applied gate voltage, dI(sub CH)/dV(sub G) jg p.2
Descriptors : *SUPERCONDUCTORS, *FIELD EFFECT TRANSISTORS, *SEMICONDUCTORS, *HYBRID SYSTEMS, *INDIUM, LOW POWER, LAYERS, TWO DIMENSIONAL, GALLIUM ARSENIDES, STRUCTURES, FILMS, GATES(CIRCUITS), DISSIPATION, VOLTAGE, EPITAXIAL GROWTH, ELECTRONS, PHYSICS, ALUMINUM, ELECTRODES, NIOBIUM, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, QUANTUM ELECTRONICS, CHANNELS, ANTIMONIDES, TRANSCONDUCTANCE.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE