Accession Number : ADA295466

Title :   Non-Destructive X-Ray, Optical and Electrical Materials Characterization Techniques for Silicon-on-Insulator (SOI) Technology.

Descriptive Note : Final rept. 1 Apr 90-30 Sep 93,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Rozgonyi, G. A. ; Cordts, B. ; Buczkowski, A. ; Shimura, F.

PDF Url : ADA295466

Report Date : 30 SEP 1993

Pagination or Media Count : 42

Abstract : The properties of the buried Si-SiO2 interface, the concentration of structural defects, and the level of contamination have been monitored nondestructively via their effect on the surface and bulk components of recombination lifetime by a laser/microwave photoconductance technique. It has been found for single and multiple implant/anneal SIMOX material that the bulk recombination lifetime decreases if the annealing alone (no implantation), or both implantation and annealing processes are applied. However, a bulk lifetime recovery for multiple implant/anneal process is observed after the second and third processing steps. In addition, the superficial layer and Si-SiO2 interface still contain a very high density of electrical defects even after the structural damage removing/oxide forming high temperature treatment. This defect density results in a surface recombination velocity on the order of 1000 cm/s, two or three orders of magnitude more than a surface subjected to annealing alone (without implantation), and only one order less than non-annealed, implanted material. (MM)

Descriptors :   *ANNEALING, *SEMICONDUCTORS, *CRYSTAL GROWTH, *IMPLANTATION, *ELECTRICAL INSULATION, VELOCITY, DENSITY, NONDESTRUCTIVE TESTING, SILICON DIOXIDE, PROCESSING, HIGH TEMPERATURE, THIN FILMS, OPTICAL MATERIALS, SUBSTRATES, X RAYS, ELECTRICAL PROPERTIES, HEAT TREATMENT, OXYGEN, DEFECTS(MATERIALS), HIGH DENSITY, RECOMBINATION REACTIONS, WAFERS, CONTAMINATION, DECAY.

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE