Accession Number : ADA295668

Title :   Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts.

Descriptive Note : Semiannual technical rept. 1 Jan-30 Jun 95,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS

Personal Author(s) : Davis, R. F. ; Nemanich, R. J. ; Aboelfotoh, O ; Barnak, J. P. ; Benjamin, M. C.

PDF Url : ADA295668

Report Date : JUN 1995

Pagination or Media Count : 32

Abstract : Monocrystalline Beta(3C-SiC films were grown on alpha (6H)-SiC(0001) substrates using gas-source MBE, silane and ethylene precursors and a temperature range of 1050 deg-145O deg C. Cubic (3C)-SiC was achieved at all T< 1400 deg C; 6H-SiC films achieved at T>1400 deg C when H2 diluent was present. The surface electronic states of clean 6H-SiC were investigated using ARUPS. Deposition and subsequent evaporation of Si and were used to clean the surface. LEED, AES and XPS showed that essentially all 0 and C contamination was removed ARUPS revealed that all surfaces on the clean 6H-SiC except those terminated by H exhibited a degree of surface resonance (surfaces states) as a result of dangling bonds. H termination unpinned the surface Fermi level. NiAl contacts with a Ni passivating layers were deposited at room temperature on p-type 6H-SiC (0001) substrates. jg

Descriptors :   *LOW TEMPERATURE, *THIN FILMS, *DEPOSITION, *SCHOTTKY BARRIER DEVICES, *SILICON CARBIDES, METALS, TEMPERATURE, PRECURSORS, SUBSTRATES, FERMI SURFACES, ROOM TEMPERATURE, SURFACES, ETHYLENE, SURFACE PROPERTIES, ELECTRONIC STATES, RESONANCE, SILANES, NICKEL, EVAPORATION, CONTAMINATION, RANGE(EXTREMES), ELECTRIC CONTACTS, ALUMINIDES.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE