Accession Number : ADA295763

Title :   Rapid Thermal Processing of Semiconductors at High Vapor Density.

Descriptive Note : Final technical rept. 15 Oct 94-28 Feb 95,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH CENTER FOR RESEARCH IN SCIENTIFIC COMPUTA TION

Personal Author(s) : Banks, H. T.

PDF Url : ADA295763

Report Date : 25 APR 1995

Pagination or Media Count : 7

Abstract : The fluid dynamics in a vertical reactor for high pressure vapor transport (HPVT) of compound semiconductors is modeled. The modeling is for the growth of II-IV-V2 chalcopyrite ZnGeP2 and addresses the flow of dense phosphorus gas at 3.42 x 10(exp 5) Pascals pressure. Effects of density variations on p-polarized reflectance spectroscopy are also examined. The mathematical model for transport processes is described by the full gasdynamic equations (Navier Stokes equations coupled with an equation for energy). In addition, buoyancy effects are included in the model through the gravitational term in the momentum equation. Numerical results of a 3-D steady flow are presented using a finite element discretization with non-uniform, quadrilateral elements. The numerical simulations were performed to study the effects of gravitational-induced buoyancy-driven convection flows in HPVT crystal growth. jg

Descriptors :   *THERMAL PROPERTIES, *VAPORS, *SEMICONDUCTORS, *HIGH DENSITY, *ZINC, *FLUID DYNAMICS, MATHEMATICAL MODELS, SPECTROSCOPY, PROCESSING, FINITE ELEMENT ANALYSIS, NUMERICAL ANALYSIS, HIGH PRESSURE, GAS DYNAMICS, TRANSPORT PROPERTIES, PHOSPHIDES, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, REFLECTANCE, HEAT, NAVIER STOKES EQUATIONS, GERMANIUM, PHOSPHORUS, CRYSTAL GROWTH, MOMENTUM, BUOYANCY, GROUP II COMPOUNDS, GRAVITATIONAL FIELDS, DENSE GASES.

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Atomic and Molecular Physics and Spectroscopy
      Mechanics
      Thermodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE