
Accession Number : ADA295763
Title : Rapid Thermal Processing of Semiconductors at High Vapor Density.
Descriptive Note : Final technical rept. 15 Oct 9428 Feb 95,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH CENTER FOR RESEARCH IN SCIENTIFIC COMPUTA TION
Personal Author(s) : Banks, H. T.
PDF Url : ADA295763
Report Date : 25 APR 1995
Pagination or Media Count : 7
Abstract : The fluid dynamics in a vertical reactor for high pressure vapor transport (HPVT) of compound semiconductors is modeled. The modeling is for the growth of IIIVV2 chalcopyrite ZnGeP2 and addresses the flow of dense phosphorus gas at 3.42 x 10(exp 5) Pascals pressure. Effects of density variations on ppolarized reflectance spectroscopy are also examined. The mathematical model for transport processes is described by the full gasdynamic equations (Navier Stokes equations coupled with an equation for energy). In addition, buoyancy effects are included in the model through the gravitational term in the momentum equation. Numerical results of a 3D steady flow are presented using a finite element discretization with nonuniform, quadrilateral elements. The numerical simulations were performed to study the effects of gravitationalinduced buoyancydriven convection flows in HPVT crystal growth. jg
Descriptors : *THERMAL PROPERTIES, *VAPORS, *SEMICONDUCTORS, *HIGH DENSITY, *ZINC, *FLUID DYNAMICS, MATHEMATICAL MODELS, SPECTROSCOPY, PROCESSING, FINITE ELEMENT ANALYSIS, NUMERICAL ANALYSIS, HIGH PRESSURE, GAS DYNAMICS, TRANSPORT PROPERTIES, PHOSPHIDES, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, REFLECTANCE, HEAT, NAVIER STOKES EQUATIONS, GERMANIUM, PHOSPHORUS, CRYSTAL GROWTH, MOMENTUM, BUOYANCY, GROUP II COMPOUNDS, GRAVITATIONAL FIELDS, DENSE GASES.
Subject Categories : Electrical and Electronic Equipment
Crystallography
Atomic and Molecular Physics and Spectroscopy
Mechanics
Thermodynamics
Distribution Statement : APPROVED FOR PUBLIC RELEASE