Accession Number : ADA295939
Title : Complementary 2-D MESFET for Low Power Electronics. Phase 1.
Descriptive Note : Interim rept. no 3,
Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA
Personal Author(s) : Peatman, William C.
PDF Url : ADA295939
Report Date : 28 JUN 1995
Pagination or Media Count : 4
Abstract : As detailed in the Phase I proposal, the project has four major tasks. These are (1) assessment of the p-channel 2-D MESFET device fabrication, (2) development of a p-channel 2-D MESFET model and implementation of the model into AIM-SPICE, (3) circuit simulations of complementary 2-D MESFET circuits using AIM-SPICE and comparison with conventional circuits, and, (4) analysis of manufacturability and technology insertion issues. This report summarizes progress in each task area through 28 JUN 95.
Descriptors : *FIELD EFFECT TRANSISTORS, *SEMICONDUCTORS, COMPUTER PROGRAMS, LOW POWER, TWO DIMENSIONAL, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, INDIUM ALLOYS, CIRCUITS, SCHOTTKY BARRIER DEVICES, P TYPE SEMICONDUCTORS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE