Accession Number : ADA296028

Title :   Atomic Layer Epitaxy of Group 4 Materials: Surface Processes, Thin Films, Devices and Their Characterization.

Descriptive Note : Semiannual rept. 1 Jan-30 Jun 95,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s) : Davis, R. F. ; Bedair, S. ; El-Masry, N A. ; Glass, J. T. ; Goeller, P.

PDF Url : ADA296028

Report Date : JUN 1995

Pagination or Media Count : 40

Abstract : The ALE technique has been employed to deposit monocrystalline 3C-SiC thin films at 860 + or - 10 deg C. Wafers containing heterojunction bipolar transistor structures have been completely processed and characterized. No transistor activity was detected in any of the HBT structures. Electrical characterization of the emitter-base and collector-base junctions revealed rudimentary rectifying behavior, indicating that the base region of the completed HBT structures was too thick for transistor activity. CoSi2 films have been electron beam evaporated onto Si <100> surfaces to study this material as a substrate for diamond deposition. The CoSi2 film was characterized with LEED, ABS depth profiling, quantitative XPS and TEM. Diamond films were subsequently grown upon the CoSi2 surface using Microwave Plasma CVD. SEM was used to evaluate the resulting diamond films in terms of particle morphology and orientation. As-grown CeO2 epitaxial films on Si<100> exhibited poor electrical and structural properties. Post growth oxidation anneals in argon followed or proceeded by oxygen environments improved both properties. However, the anneals in oxygen also resulted in the growth of an SiO2 layer at the silicon interface which reduced the capacitance of the structure. An expression for the optimum oxidation time, tau, was developed as a function of the initial thicknesses of the deposited film. jg p.2

Descriptors :   *THIN FILMS, *EPITAXIAL GROWTH, *SURFACES, *GROUP IV COMPOUNDS, *CHEMISORPTION, *COBALT, THICKNESS, ANNEALING, OPTIMIZATION, INTERFACES, STRUCTURAL PROPERTIES, COMPOSITE MATERIALS, PLASMAS(PHYSICS), HETEROJUNCTIONS, MORPHOLOGY, DIAMONDS, SINGLE CRYSTALS, CHEMICAL VAPOR DEPOSITION, MICROWAVES, SUBSTRATES, ELECTRICAL PROPERTIES, OXYGEN, ELECTRON BEAMS, PARTICLES, LOW ENERGY, OXIDATION, X RAY PHOTOELECTRON SPECTROSCOPY, ACCUMULATORS, WAFERS, EVAPORATION, EMITTERS, ARGON, ELECTRON DIFFRACTION, AUGER ELECTRON SPECTROSCOPY, SILICON CARBIDES, BIPOLAR TRANSISTORS, CAPACITANCE.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Crystallography
      Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE