Accession Number : ADA296121
Title : Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Descriptive Note : Quarterly technical rept. for 1 Apr-30 Jun 95,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH
Personal Author(s) : Davis, R. F. ; Glass, J. T. ; Nemanich, R. J. ; Bozeman, S. P. ; Sowers, A. T.
PDF Url : ADA296121
Report Date : JUN 1995
Pagination or Media Count : 33
Abstract : Monocrystalline beta(3C)-SiC films were grown on alpha(6H)-SiC(0001) substrates using gas-source MBE, silane and ethylene precursors and a temperature range of 1050-l450 deg C. Cubic (3C)-SiC was achieved at all T<1400 deg C; 6H-SiC films achieved at T>1400 deg C when H2 diluent was present. The surface electronic states of clean 6H-SiC were investigated using ARUPS. Deposition and subsequent evaporation of Si and were used to clean the surface. LEED, AES and XPS showed that essentially all O and C contamination was removed. ARUPS revealed that all surfaces on the clean 6H-SiC except those terminated by H exhibited a degree of surface resonance (surfaces states) as a result of dangling bonds. H termination unpinned the surface Fermi level. NiAl contacts with a Ni passivating layers were deposited at room temperature on p-type 6H-SiC(0001) substrates. The as-deposited contacts were rectifying with very low leakage current densities (approx. 1x10(exp -8) A/sq cm at 10 V), ideality factors between 1.4 and 2.4, and a Schottky barrier height (SBH) of approximately 1.37eV. As-deposited Ni and Au contacts on p-type 6H-SiC displayed similar current-voltage characteristics with calculated SBH's of 1.31 and 1.27 eV, respectively. The former became ohmic on p+ (1 x10(exp 19/cu cm) 6H-SiC (0001) after annealing for 10-80 s at 1000 0C in a N2 ambient. jg p.2
Descriptors : *FILMS, *DIAMONDS, *SINGLE CRYSTALS, *SEMICONDUCTORS, *SILICON CARBIDES, TEMPERATURE, ANNEALING, PRECURSORS, GROWTH(GENERAL), VOLTAGE, CURRENT DENSITY, EPITAXIAL GROWTH, CARBON, FERMI SURFACES, MOLECULAR BEAMS, ROOM TEMPERATURE, HYDROGEN, ETHYLENE, DEPOSITION, SURFACE PROPERTIES, ELECTRONIC STATES, X RAY PHOTOELECTRON SPECTROSCOPY, RESONANCE, SILANES, NICKEL, ELECTRIC CURRENT, EVAPORATION, CONTAMINATION, SCHOTTKY BARRIER DEVICES, AUGER ELECTRON SPECTROSCOPY, HEIGHT, SILICIDES, TRANSISTORS.
Subject Categories : Coatings, Colorants and Finishes
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE