Accession Number : ADA296245
Title : Electron Transport in Heterojunction Superlattices.
Descriptive Note : Final rept.,
Corporate Author : PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Personal Author(s) : Tsui, D. C. ; Shayegan, M.
PDF Url : ADA296245
Report Date : 09 MAY 1995
Pagination or Media Count : 5
Abstract : This is a final report on the research carried out under the ARO contract DAAL03-89-K-0036 (ARO proposal number 26015-PH) from April 15, 1989 to August 31, 1992.It describes briefly three accomplishments in the area of resonant tunneling through double-barrier devices made of GaAs/Al GaAs heterostructures. They include results on: (1) magnetotunneling characteristics, (2) noise characteristics, and (3) resonant tunneling from a two-dimensional electron system into one-dimensional subbands of a quantum wire, realized through a novel growth geometry. jg p.1
Descriptors : *ELECTRON TRANSPORT, *HETEROJUNCTIONS, *SUPERLATTICES, *RESONANCE, *TUNNELING, TWO DIMENSIONAL, GROWTH(GENERAL), WIRE, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, ONE DIMENSIONAL, STRUCTURES, BARRIERS, GEOMETRY, QUANTUM ELECTRONICS, NOISE.
Subject Categories : Solid State Physics
Electrical and Electronic Equipment
Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE