Accession Number : ADA296452

Title :   Blue Semiconductor Lasers Based on Wide-Band-Gap II-VI Materials.

Descriptive Note : Final technical rept.,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS

Personal Author(s) : Schetzina, J. F.

PDF Url : ADA296452

Report Date : 1994

Pagination or Media Count : 15

Abstract : A high resolution study of the optical emission from nitrogen-plasmas produced by an Oxford Applied Research radio frequency plasma source is reported. The use of electron cyclotron resonance (ECR) plasma sources has led to recent advances in the growth of GaN and other III-V nitride semiconductors by molecular beam epitaxy (MBE). Methods have been developed for the MBE-growth of integrated heterostructure devices containing both narrow-band-gap and wide-band-gap II-VI materials. Device processing procedures were also developed.

Descriptors :   *SEMICONDUCTOR LASERS, *EPITAXIAL GROWTH, PLASMAS(PHYSICS), HALL EFFECT, QUANTUM WELLS, PHOTOLUMINESCENCE, SEMICONDUCTOR DIODES, HIGH RESOLUTION, MOLECULAR BEAMS, NITROGEN, BROADBAND, GROUP III COMPOUNDS, RADIOFREQUENCY, NEAR INFRARED RADIATION, GROUP II-VI COMPOUNDS, LIGHT EMITTING DIODES, CYCLOTRON RESONANCE.

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE