Accession Number : ADA296746

Title :   Nitride Semiconductors for Ultraviolet Detection.

Descriptive Note : Semiannual rept. 1 Jan-30 Jun 95,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Davis, R. F. ; Bremser, M. D. ; Gruss, K. ; Linthicum, K. ; Ferry, B.

PDF Url : ADA296746

Report Date : JUN 1995

Pagination or Media Count : 61

Abstract : Continued development and commercialization of optoelectronic devices, including light emitting diodes and semiconductor lasers produced from III-V gallium arsenide-based materials, has also generated interest in the much wider bandgap semiconductor mononitride materials containing aluminum, gallium, and indium. The majority of the studies have been conducted on pure gallium nitride thin films having the wurtzite structure, and this emphasis continues to the present day. The program objectives achieved in this reporting period have been (1) the growth of undoped, high resistivity and n- and p-type doped monocrystalline, GaN thin films on alpha(6H)-SiC(000l) wafers via organometallic vapor phase epitaxy (OMVPE), and their characterization via photoluminescence (2) the growth and cathodoluminescence characterization of Al (x)Ga(1-x)N alloys and abrupt heterojunctions of these alloys, (3) the development and application of a novel NH3 cracker cell for gas source MBE to reduce film damage and (4) the reactive ion etching of undoped GaN films via use of Cl-containing compounds. jg p.4

Descriptors :   *SEMICONDUCTORS, *NITRIDES, *ULTRAVIOLET DETECTION, SOURCES, DAMAGE, ELECTROOPTICS, MATERIALS, RESISTANCE, GALLIUM ARSENIDES, PHOTOLUMINESCENCE, THIN FILMS, REACTIVITIES, ZINC SULFIDES, SINGLE CRYSTALS, ORGANOMETALLIC COMPOUNDS, SEMICONDUCTOR LASERS, EPITAXIAL GROWTH, ION BEAMS, ALLOYS, VAPOR PHASES, ETCHING, MOLECULAR BEAMS, AMMONIA, GASES, ALUMINUM, BROADBAND, GALLIUM, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, CATHODOLUMINESCENCE, WAFERS, INDIUM, SILICON CARBIDES, CHLORINE, LIGHT EMITTING DIODES.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrooptical and Optoelectronic Devices
      Crystallography
      Atomic and Molecular Physics and Spectroscopy
      Mechanics

Distribution Statement : APPROVED FOR PUBLIC RELEASE