Accession Number : ADA296825

Title :   Real-Time LEEM Studies of Epitaxial Growth of Nitride Films.

Descriptive Note : Final rept. 1 Feb 94-28 Feb 95,

Corporate Author : ARIZONA STATE UNIV TEMPE

Personal Author(s) : Tsong, I. S. ; Bauer, E.

PDF Url : ADA296825

Report Date : 06 JUL 1995

Pagination or Media Count : 42

Abstract : The nitridation of the Si(111) surface by reacting with NH3 was studied by low-energy electron microscopy (LEEM), low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). Reaction layers with periodicities of (8x8), (8/3x8/3), (3/4x3/4) and (3(square root of)3/4 x 3 (square root of)3/4) were observed depending on the temperature of nitridation and duration of electron beam exposure. The nucleation and growth of the nitride layer on well-oriented and miscut Si(111) surfaces were observed by STM and followed in real time by video LEEM. The (8x8) nitride islands nucleate and grow in the same manner as the (7x7) domains, with the apex of the triangle pointing in the 1-BAR-1-BAR2 direction away from the step into the upper terrace. On the miscut surface, (8x8) nitride growth proceeds with widening of the terraces and step bunching. The (3/4x3/4) multiplet structure, on the other hand, nucleates randomly on contaminated sites on the surface, or evolves directly from the (8x8) structure. jg p.2

Descriptors :   *FILMS, *EPITAXIAL GROWTH, *NITRIDES, *SILICON COMPOUNDS, SCANNING, METALS, TEMPERATURE, REAL TIME, LAYERS, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, SITES, THIN FILMS, SINGLE CRYSTALS, SEMICONDUCTORS, NUCLEATION, AMMONIA, ELECTRON MICROSCOPY, ELECTRON BEAMS, LOW ENERGY, IMAGES, CONTAMINATION, VIDEO SIGNALS, ELECTRON DIFFRACTION, ISLANDS.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Coatings, Colorants and Finishes
      Crystallography
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE