Accession Number : ADA296864
Title : Interface Properties of Wide Bandgap Semiconductor Structures.
Descriptive Note : Semiannual rept. 1 Jan -30 Jun 95,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Davis, R. F. ; Bedair, S. ; Bernholc, J. ; Glass, J. T. ; Nemanich, R. J.
PDF Url : ADA296864
Report Date : JUN 1995
Pagination or Media Count : 235
Abstract : Heteroepitaxy is the growth of a crystal (or a film) on a foreign crystalline substrate that determines its orientation. While the potential of heteroepitaxial deposition has been demonstrated, significant advances in theoretical understanding, experimental growth and control of this growth, and characterization are required to exploit the capabilities of this process route. The materials of concern in this report are classified as wide bandgap semiconductors and include diamond, SiC and the III-V nitrides of Al, Ga, and In and their alloys. The extremes in electronic and thermal properties of diamond and SiC allow the types and numbers of current and conceivable applications of these materials to be substantial. However, a principal driving force for the interest in the III-V nitrides is their potential for solid-state optoelectronic devices for light emission and detection from the visible through the far ultraviolet range of the spectrum. The principal objectives of the research program are (1) the fundamental physical and chemical processes ongoing at the substrate surface and substrate/film interface during the heteroepitaxial deposition of both monocrystalline films of the materials noted above, as well as metal contacts on these materials, (2) the mode of nucleation and growth of the materials noted in (1) on selected substrates and on each other in the fabrication of multilayer heterostructures, (3) the resulting properties of the individual films and the layered structures and the effect of interfacial defects on these properties, (4) the development and use of theoretical concepts relevant to the research in objectives (1-3) to assist in the fabrication of improved films and structures.
Descriptors : *INTERFACES, *THIN FILMS, *EPITAXIAL GROWTH, *SEMICONDUCTORS, *CRYSTAL GROWTH, THERMAL PROPERTIES, DIODES, EMISSION, ALUMINUM ALLOYS, ELECTROOPTICS, PLASMAS(PHYSICS), ELECTROMAGNETIC PROPERTIES, FABRICATION, SINGLE CRYSTALS, ENERGY GAPS, CHEMICAL VAPOR DEPOSITION, INDIUM ALLOYS, SUBSTRATES, NUCLEATION, CARBON, LASERS, ETCHING, MOLECULAR BEAMS, NITRIDES, SURFACES, DEFECTS(MATERIALS), SURFACE PROPERTIES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, NICKEL ALLOYS, LEAKAGE(ELECTRICAL), SCHOTTKY BARRIER DEVICES, SILICON CARBIDES, SOLID STATE ELECTRONICS, GALLIUM ALLOYS, METAL CONTACTS, FAR ULTRAVIOLET RADIATION.
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE