Accession Number : ADA297039

Title :   LEC Growth of Bulk In(x)Ga(1-x)As.

Descriptive Note : Final rept. 1 Sep 93-31 Dec 94,

Corporate Author : WARE TECHNICAL SERVICES INC WESTWOOD MA

Personal Author(s) : Ware, Rowland M. ; Puechner, R. A. ; Tiernan, Mark ; Morris, Mark

PDF Url : ADA297039

Report Date : 13 JUN 1995

Pagination or Media Count : 25

Abstract : A Double Crucible Liquid Encapsulated Czochralski (DCLEC) process was developed for the growth of single crystals of In(x)Ga(1-x)As. The conditions for the flow of non-wetting liquids through capillaries were determined and applied to Hot Pressed Boron Nitride crucibles to achieve stable flow of InGaAs melts, without back-diffusion of In, and without interference from the boric oxide encapsulant. The problem of mixing int the inner crucible was solved by the use of supercooled melts to obtain fine grained, uniform composition pre-cast charges. Growth of In(x)Ga(1-x)As with x values up to 0.035 was achieved. This material was semi-insulating. jg p.1

Descriptors :   *GALLIUM ARSENIDES, *INDIUM, STABILITY, GROWTH(GENERAL), MELTS, HOT PRESSING, SINGLE CRYSTALS, EPITAXIAL GROWTH, SEMICONDUCTORS, BULK MATERIALS, INTERNAL, ENCAPSULATION, MIXING, DIFFUSION, FLOW, TERNARY COMPOUNDS, SUPERCOOLING, BORON OXIDES, CAPILLARITY, BORON NITRIDES, CRUCIBLES.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE