Accession Number : ADA297095
Title : High Speed MISFETs and Device Physics.
Descriptive Note : Final technical rept. Oct 92-Apr 95,
Corporate Author : ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
Personal Author(s) : Morkoc, Hadis
PDF Url : ADA297095
Report Date : 26 JUN 1995
Pagination or Media Count : 10
Abstract : We have investigated MISFETs based on GaAs, InGaAs, and InP materials with promising potential for microwave and high speed digital applications. Using state-of-the-art MBE and vacuum connected UHV CVD, the gate dielectric layer was deposited without exposing the surface to contaminants. The insertion of a thin layer of Si between the Si3N4 and GaAs and other II-V compounds led to improved interfaces. The gate dielectric quality in terms of low leakage and high breakdown voltage has been improved to a level comparable to that achieved by the thermal CVD method which must be performed at high temperatures not accessible by compound semiconductors. Our effort is directed toward the eventual realization of inversion-mode devices analogous to the traditional IC processing technologies. jg p.1
Descriptors : *METALS, *INSULATION, *HIGH VELOCITY, *FIELD EFFECT TRANSISTORS, *SEMICONDUCTORS, THERMAL PROPERTIES, DIGITAL SYSTEMS, LAYERS, PROCESSING, COMPOSITE MATERIALS, HIGH TEMPERATURE, GALLIUM ARSENIDES, DIELECTRICS, GATES(CIRCUITS), CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, INTEGRATED CIRCUITS, MICROWAVES, MOLECULAR BEAMS, SURFACES, CONTAMINANTS, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, THINNESS, LEAKAGE(ELECTRICAL), INDIUM PHOSPHIDES, BREAKDOWN(ELECTRONIC THRESHOLD), ULTRAHIGH VACUUM, GROUP II COMPOUNDS, SILICON NITRIDES.
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE