Accession Number : ADA297251

Title :   Investigation of Novel Devices in Wide Bandgap Semiconductors.

Descriptive Note : Final rept. 1 May 92-30 Apr 94,

Corporate Author : PURDUE UNIV LAFAYETTE IN DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Cooper, James A., Jr. ; Melloch, Michael R. ; Sheppard, Scott T.

PDF Url : ADA297251

Report Date : 25 JUL 1995

Pagination or Media Count : 156

Abstract : Silicon carbide is a wide bandgap semiconductor that is well suited for high power, high temperature electronic devices due to its remarkable electronic and thermal properties. Photosensitive devices in the 6H polytype of SiC have also been demonstrated, showing high sensitivity in ultraviolet wavelengths near 270 nm. Furthermore, the native oxide on SiC is silicon dioxide, meaning that SiC can be thermally oxidized to form a high quality gate dielectric, making metal-oxide-semiconductor (MOS) devices possible. These qualities make silicon carbide ideal for constructing UV sensitive CCD imagers. This work investigates the feasibility for developing imagers in SiC through the fabrication and demonstration of a buried channel CCD linear shift array. jg p.5

Descriptors :   *SEMICONDUCTORS, *BROADBAND, *SILICON CARBIDES, THERMAL PROPERTIES, FREQUENCY, HIGH POWER, DENSITY, ULTRAVIOLET RADIATION, SILICON DIOXIDE, HIGH TEMPERATURE, ELECTROMAGNETIC PROPERTIES, DIELECTRICS, ELECTRONIC EQUIPMENT, GATES(CIRCUITS), ENERGY GAPS, FIELD EFFECT TRANSISTORS, METAL OXIDE SEMICONDUCTORS, ION IMPLANTATION, OXIDES, SHIFTING, IMAGES, CHARGE TRANSFER, LINEAR ARRAYS, BURIED OBJECTS, PHOTODETECTORS, CHANNELS, CAPACITANCE, ELECTRON MOBILITY, CHARGE COUPLED DEVICES, HIGH SENSITIVITY, PHOTOSENSITIVITY.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Electricity and Magnetism
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE