Accession Number : ADA297372
Title : The Growth and Characterization of GaN as a Photodetector.
Descriptive Note : Semiannual technical rept. 1 Nov 94-30 Apr 95,
Corporate Author : CORNELL UNIV ITHACA NY DEPT OF PHYSICS
Personal Author(s) : Ho, Wilson
PDF Url : ADA297372
Report Date : 31 JUL 1995
Pagination or Media Count : 5
Abstract : The growth of thin films of single crystal h-GaN, h-AlN, and 3C-SiC on Si(100) and Si(111) with supersonic gas jets has been demonstrated. Among the major findings to date are the following. The growth rates on Si(100) are consistently 2-3 times higher than those on Si(111) for both GaN and AlN. Surface cleanliness affects significantly the growth rates. The quality of the films was uniformly better if the films were grown by atomic layer epitaxy than with concurrent dosing of the reactants. Kinetic energy of the reactants enhances significantly the growth rates. For kinetic energy higher than about 5 eV, however, the beginning of film degradation begins to appear from x-ray diffraction results. Single crystal h-GaN films have also been grown successfully on 30-SiC initially deposited on Si(111), and similarly on AlN/Si(100). Large area growth of AlN on 4-inch diameter Si(100) wafers has been achieved using slit nozzle jets and a rotating substrate. jg p.1
Descriptors : *GALLIUM, *PHOTODETECTORS, *SILICON CARBIDES, DEGRADATION, THIN FILMS, X RAY DIFFRACTION, FILMS, SINGLE CRYSTALS, EPITAXIAL GROWTH, SUBSTRATES, NITRIDES, GASES, ALUMINUM, KINETIC ENERGY, SUPERSONIC FLOW, ROTATION, JET FLOW.
Subject Categories : Inorganic Chemistry
Optical Detection and Detectors
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE