Accession Number : ADA297555
Title : Hydrogen Migration and Complex Formation in Technologically Important III-V and II-VI Semiconductors and Their Alloys.
Descriptive Note : Final rept. 5 Sep 91-4 Sep 94,
Corporate Author : XEROX PALO ALTO RESEARCH CENTER CA
Personal Author(s) : Johnson, N. M.
PDF Url : ADA297555
Report Date : APR 1995
Pagination or Media Count : 41
Abstract : Experimental and theoretical studies were conducted to identify basic mechanisms and provide quantitative information on the properties of hydrogen in selected (technologically-important) III-V and II-VI semiconductors and their alloys. Hydrogen interactions with dopants and deep level defects were investigated in GaAs, AlGaAs, InGaAs/AlGaAs quantum wells, GaP, GaN, and ZnSe.The diffusivity of H+ in GaAs was determined with a new capacitance transient technique, which provided the first direct quantitative determination of the diffusivity of hydrogen in any compound semiconductor. Vibrational mode spectroscopy identified the N-H complex in ZnSe:N and the Zn-H complex in GaP:Zn. Hydrogenation of Mg-doped GaN produced acceptor passivation. New local vibrational modes were detected in MBE-grown, Mg-doped GaN. Computational studies were conducted on native defects in Ga N with the conclusion that, contrary to a wide-spread assumption, the nitrogen vacancy cannot be the source of the high n-type conductivity generally found in as-grown undoped GaN. Electronic defects were characterized in n-type GaN by deep level transient spectroscopy (DLTS) and optical-DLTS. Finally, in epitaxial ZnSe the effects of hydrogenation during gas-source (e.g., H2Se) MBE were found to be significantly enhanced when N was used as the acceptor dopant and resulted in highly resistive films, while Cl-doped n-type films were largely unaffected by the presence of hydrogen during growth. jg
Descriptors : *SEMICONDUCTORS, *ALLOYS, *HYDROGEN, *GROUP III COMPOUNDS, *MIGRATION, *GROUP II-VI COMPOUNDS, TRANSIENTS, ELECTRONICS, MAGNESIUM, EXPERIMENTAL DATA, COMPUTATIONS, HIGH RATE, CONDUCTIVITY, SPECTROSCOPY, INTERACTIONS, QUANTUM WELLS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, EPITAXIAL GROWTH, MOLECULAR BEAMS, NITRIDES, NITROGEN, DEFECTS(MATERIALS), GROUP IV COMPOUNDS, DOPING, N TYPE SEMICONDUCTORS, INDIUM PHOSPHIDES, ELECTRON ACCEPTORS, CHLORINE, CAPACITANCE, HYDROGENATION, PASSIVITY, GALLIUM PHOSPHIDES, ZINC SELENIDES, VIBRATIONAL SPECTRA, GROUP VI COMPOUNDS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Properties of Metals and Alloys
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE