Accession Number : ADA297581

Title :   Investigation of Normal Incident High Performance P-type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors.

Descriptive Note : Semi-Annual progress rept. no. 4, 15 Feb-25 Jul 95,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Chu, Jerome T. ; Li, Sheng S.

PDF Url : ADA297581

Report Date : 31 JUL 1995

Pagination or Media Count : 45

Abstract : We have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressively strained p-type InGaAs/AlGaAs QWIP grown on GaAs by MBE with very low dark current densities. This new QWIP achieved two color detection with detection peaks at 7.4 micrometers in the LWIR band and 5.5 micrometers in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 67 K, with operation possible at temperatures greater than 85 K. The measured responsivity was found to be 40 mA/W for the LWIR peak, while a responsivity of 8 mA/W was found for the MWIR peak; all at T=77 K. In addition, the measured detectivity was found to be 1.06 x 10(exp 10) Jones at T=81 K and 1.0 V of applied bias. In addition, two new compressively strained p-QWIPs with detection peaks at 9.2 micrometers and 10.1 micrometers were characterized. Responsivities of 28 mA/W at T=45 K and V=-2.5 V and 1% mA/W at T=55 K and -1.0 V were measured at the 9.2 micrometers and 10.1 micrometers peaks respectively. The 9.2 micrometers p-QWIP has an estimated D* of 2.7 x 1O(exp 9) Jones, while the 10.1 micrometers peak p-QWIP has an estimated D*-of 1.04 x 10(exp 9) Jones. Finally, a Si-doped unstrained p-QWIP grown on (311) Si GaAs was characterized. This p-QWIP exhibits extremely symmetrical dark current characteristics and has two MWIR detective peaks at 3.0 micrometers and 5.2 micrometers. jg p.2

Descriptors :   *QUANTUM WELLS, *GALLIUM ARSENIDES, *ALUMINUM GALLIUM ARSENIDES, *INFRARED DETECTORS, *PHOTODETECTORS, *INDIUM, *P TYPE SEMICONDUCTORS, DENSITY, DETECTION, EPITAXIAL GROWTH, MOLECULAR BEAMS, ESTIMATES, SILICON, COLORS, BIAS, COMPRESSIVE PROPERTIES.

Subject Categories : Optical Detection and Detectors
      Inorganic Chemistry
      Electrical and Electronic Equipment
      Optics
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE